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FTD1011

Sanyo Semicon Device
Part Number FTD1011
Manufacturer Sanyo Semicon Device
Description Ultrahigh-Speed Switching Applications
Published Mar 23, 2005
Detailed Description Ordering number : ENN6593 FTD1011 P-Channel Silicon MOSFET FTD1011 Ultrahigh-Speed Switching Applications Features • •...
Datasheet PDF File FTD1011 PDF File

FTD1011
FTD1011

Overview
Ordering number : ENN6593 FTD1011 P-Channel Silicon MOSFET FTD1011 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions unit : mm 2155A [FTD1011] 0.
65 0.
425 Low ON-resistance.
2.
5V drive.
Mount height of 1.
1mm.
Composite type, facilitating high-density mounting.
8 5 0.
5 4.
5 6.
4 0.
95 3.
0 1 0.
25 4 (0.
95) 0.
125 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT ...


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