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IPP70N04S4-06

Infineon Technologies
Part Number IPP70N04S4-06
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
Datasheet PDF File IPP70N04S4-06 PDF File

IPP70N04S4-06
IPP70N04S4-06

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Product Summary V DS R DS(on),max (SMD version) ID 40 V 6.
2 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N04S4-06 IPI70N04S4-06 IPP70N04S4-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0406 4N0406 4N0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=35A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 70 51 280 72 70 ±20 58 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C Rev.
1.
0 page 1 2010-04-13 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics1) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 2.
6 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=26µA I DSS V DS=40V, V GS=0V V DS=18V, V GS=0V, T j=85°C2) I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=70A V GS=10V, I D=70A, SMD version 40 - -V 2.
0 3.
0 4.
0 - 0.
015 1 µA - 1 20 - - 100 nA - 5.
6 6.
5 mΩ - 5.
3 6.
2 Rev.
1.
0 page 2 2010-04-13 Parameter Dynamic characteristics1) Input capacitance Output capacit...


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