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IPI77N06S3-09

Infineon Technologies
Part Number IPI77N06S3-09
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C ...
Datasheet PDF File IPI77N06S3-09 PDF File

IPI77N06S3-09
IPI77N06S3-09

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Product Summary V DS R DS(on),max (SMD version) ID 55 V 8.
8 mΩ 77 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0609 3N0609 3N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) Avalanche energy, single pulse1) I D,pulse E AS T C=25 °C I D=38.
5 A Avalanche current, single pulse I AS Gate source voltage2) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 77 55 160 245 77 ±20 107 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C Rev.
1.
1 page 1 2007-11-07 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics1) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 1.
4 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - Gate threshold voltage V GS(th) V DS=V GS, I D=55 µA 2.
1 3.
0 -V 4 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.
01 1 µA Gate-source leakage current Drain-source on-state resistance V DS=55 V, V GS=0 V, T j=125 °C2) I GSS V GS=16 V, V DS=0 V R DS(on) V GS=10 V, I D=39 A - - 1 100 1 100 nA 7.
7 9.
1 mΩ V GS=10 V, I D=39 A, SMD version - 7.
4 8.
8 Rev.
1.
1 page 2 2007-11-07 Parameter Dynamic chara...


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