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IPD70N04S3-07

Infineon Technologies
Part Number IPD70N04S3-07
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
Datasheet PDF File IPD70N04S3-07 PDF File

IPD70N04S3-07
IPD70N04S3-07

Overview
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD70N04S3-07 Product Summary V DS R DS(on),max ID 40 V 6.
0 mΩ 82 A PG-TO252-3-11 Type IPD70N04S3-07 Package Marking PG-TO252-3-11 QN0407 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50 A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and...


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