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NCE40H19

NCE Power Semiconductor
Part Number NCE40H19
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE40H19 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H19 ...
Datasheet PDF File NCE40H19 PDF File

NCE40H19
NCE40H19

Overview
http://www.
ncepower.
com Pb Free Product NCE40H19 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H19 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =40V,ID =190A RDS(ON) < 3.
5mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE40H19 NCE40H19 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 40 ±20 190 134 750 220 1.
47 1400 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE40H19 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 0.
68 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=40V,VGS=0V 40 - V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 23 4 V Dra...


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