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FIR3441AG

First Semiconductor
Part Number FIR3441AG
Manufacturer First Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description P-Channel Enhancement Mode Power MOSFET Description The FIR3441AG uses advanced trench technology to provide excellent R...
Datasheet PDF File FIR3441AG PDF File

FIR3441AG
FIR3441AG

Overview
P-Channel Enhancement Mode Power MOSFET Description The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features • VDS = -30V,ID = -4.
4A RDS(ON) < 65mΩ @ VGS=-4.
5V RDS(ON) < 50mΩ @ VGS=-10V • High Power and current handing capability • Lead free product is acquired • Surface Mount Package Application • PWM applications • Load switch • Power management FIR3441AG Top vlew SOT-23 D G S D G S Schematic diagram Marking and pin Assignment Package Marking And Ordering Information Device Marking Device Device Package 3401A NCE3401A SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range ID IDM PD TJ,TSTG Limit -30 ±12 -4.
4 -30 1.
3 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 95 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V Min Typ Max Unit -30 -33 -- -1 V μA @ 2010 Copyright By American First Semiconductor Page 1/6 FIR3441AG Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) IGSS V...


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