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NCE3080I

NCE Power Semiconductor
Part Number NCE3080I
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE3080I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I ...
Datasheet PDF File NCE3080I PDF File

NCE3080I
NCE3080I

Overview
http://www.
ncepower.
com Pb Free Product NCE3080I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =80A RDS(ON) <6.
5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package NCE3080I NCE3080I TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 80 50 170 83 0.
56 150 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
3 http://www.
ncepower.
com Pb Free Product NCE3080I Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.
8 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V Gate-Body Leakage Current On Characteristics (Note 3) IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A VGS=5V, ID=24A Forward Transconductance Dynamic Character...


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