DatasheetsPDF.com

IPD90N03S4L-03

Infineon
Part Number IPD90N03S4L-03
Manufacturer Infineon
Description Power-Transistor
Published May 23, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C ...
Datasheet PDF File IPD90N03S4L-03 PDF File

IPD90N03S4L-03
IPD90N03S4L-03

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD90N03S4L-03 Product Summary V DS R DS(on),max ID 30 V 3.
3 mΩ 90 A PG-TO252-3-11 Type IPD90N03S4L-03 Package Marking PG-TO252-3-11 4N03L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A Avalanche current, single pulse I AS T C=25 °C Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 90 360 85 90 ±16 94 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C Rev.
2.
1 page 1 2010-03-08 IPD90N03S4L-03 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min.
Values typ.
Unit max.
- - 1.
6 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 30 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=45 µA 1.
0 1.
6 2.
2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.
01 1 µA V DS=30 V, V GS=0 V, T j=125 °C2) - 10 1000 Gate-source leakage current Drain-source on-state resistance V DS=18 V, V GS=0 V, T j=85 °C2) I GSS V GS=16 V, V DS=0 V R DS(on) V GS=4.
5 V, I D=45 A V GS=10 V, I D=90 A - - 5 60 1 100 nA 3.
4 4.
4 mΩ 2.
5 3.
3 Rev.
2.
1 page 2 2010-03-08 IPD90N03S4L-03 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteri...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)