DatasheetsPDF.com

IPI90N06S4L-04

Infineon
Part Number IPI90N06S4L-04
Manufacturer Infineon
Description Power-Transistor
Published May 27, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet PDF File IPI90N06S4L-04 PDF File

IPI90N06S4L-04
IPI90N06S4L-04

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 Product Summary V DS R DS(on),max (SMD version) ID 60 V 3.
4 mΩ 90 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB90N06S4L-04 IPI90N06S4L-04 IPP90N06S4L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L04 4N06L04 4N06L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value 90 90 360 331 90 ±16 150 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C Rev.
1.
0 page 1 2009-03-24 IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.
0 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=90µA I DSS V DS=60V, V GS=0V V DS=60V, V GS=0V, T j=125°C2) I GSS V GS=16V, V DS=0V R DS(on) V GS=4.
5V, I D=45A V GS=4.
5V, I D=45A, SMD version V GS=10 V, I D=90 A V GS=10 V, I D=90 A, SMD version 60 - -V 1.
2 1.
7 2.
2 - 0.
01 1 µA - 5 100 - - 100 nA - 3.
9 5.
9 mΩ - 3.
6 5.
6 - 3.
0 3.
7 - 2.
7 3.
4...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)