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IPP80N06S4L-07

Infineon
Part Number IPP80N06S4L-07
Manufacturer Infineon
Description Power-Transistor
Published May 27, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet PDF File IPP80N06S4L-07 PDF File

IPP80N06S4L-07
IPP80N06S4L-07

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 6.
4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L07 4N06L07 4N06L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value 80 58 320 71 80 ±16 79 -55 .
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