IGBT
Description
Advance Technical Data
IGBT with Diode
IXGK 50N60A2D1 IXGX 50N60A2D1
V I CES VC25
CE(sat)
= 600 V = 75 A = 1.4 V
Low Saturation Voltage
Symbol
Test Conditions
VCES VCGR
VGES VGEM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C (50N60B2D1 Diode)
ICM TC = 2...
Similar Datasheet
- IXGX50N60A2D1 IGBT - IXYS Corporation