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NCE75H14

NCE Power
Part Number NCE75H14
Manufacturer NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 28, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE75H14 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H14 ...
Datasheet PDF File NCE75H14 PDF File

NCE75H14
NCE75H14

Overview
http://www.
ncepower.
com Pb Free Product NCE75H14 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H14 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =75V,ID =140A RDS(ON) <5.
8mΩ @ VGS=10V (Typ:5.
1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE75H14 NCE75H14 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Limit 75 ±20 140 97 550 260 1.
73 1200 Unit V V A A A W W/℃ mJ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE75H14 Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition -55 To 175 ℃ 0.
58 ℃/W Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=75V,VGS=0V VGS=±20V,VDS=0V 75 - V - - 1 μA - - ±100 nA Gate Threshold Voltage Drain-Source On-State Resist...


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