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IPB120P04P4-04

Infineon
Part Number IPB120P04P4-04
Manufacturer Infineon
Description Power-Transistor
Published May 29, 2015
Detailed Description OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C p...
Datasheet PDF File IPB120P04P4-04 PDF File

IPB120P04P4-04
IPB120P04P4-04

Overview
OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 Product Summary V DS R DS(on) (SMD Version) ID -40 V 3.
5 mW -120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120P04P4-04 IPI120P04P4-04 IPP120P04P4-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P0404 4P0404 4P0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=-60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev.
1.
0 page 1 Value -120 -110 -480 78 -120 ±20 136 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C 2011-02-14 IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.
1 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= -1mA V GS(th) V DS=V GS, I D=-340µA I DSS V DS=-32V, V GS=0V, T j=25°C V DS=-32V, V GS=0V, T j=125°C2) I GSS V GS=-20V, V DS=0V R DS(on) V GS=-10V, I D=-100A V GS=-10V, I D=-100A, SMD version -40 -2.
0 - - -3.
0 -0.
05 -20 - 2.
9 2.
6 -V -4.
0 -1 µA -200 -100 nA 3.
8 mW 3.
5 Rev.
1.
0 page 2 2011-02-14 Parameter ...


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