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SCH2080KE

Part Number	SCH2080KE
Manufacturer	Rohm
Description	N-channel SiC power MOSFET
Published	May 29, 2015
Detailed Description	SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 80m 40A 262W...
Datasheet	SCH2080KE PDF File

Overview

SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet VDSS RDS(on) (Typ.
) ID PD 1200V 80m 40A 262W Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Low VSD 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant Application ・Solar inverters ・DC/DC converters ・Induction heating ・Motor drives Outline TO-247 Inner circuit D(2) G(1) *1 *2 S(3) (1) Gate (2) Drain (3) Source *1 Body Diode *2 SBD Packaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 - SCH2080KE Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS PD Tj Tstg Value 1200 40 28 80 6 to 22 262 175 55 to 175 Unit V A A A V W °C °C www.
rohm.
com © 2014 ROHM Co.
, Ltd.
All rights reserved.
1/12 2014.
01 - Rev.
D SCH2080KE Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Min.
Typ.
Max.
Unit - 0.
44 0.
57 °C/W - - 50 °C/W - - 265 °C Electrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min.
Typ.
Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 1200 - - Zero gate voltage drain current Gate - Source leakage current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate input resistance VDS = 1200V, VGS = 0V IDSS Tj = 25°C Tj = 150°C IGSS+ VGS = 22V, VDS = 0V IGSS- VGS = 6V, VDS = 0V VGS (th) VDS = VGS, ID = 4.
4mA VGS = 18V, ID = 10A RDS(on) *3 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain 1.
6 - 20 400 170 - - 100 - 100 - 4.
0 80 117 125 6.
3 - Unit V A nA nA V m  ww...

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