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BSO080P03NS3G

Infineon Technologies

Power-Transistor


Description
OptiMOS™3 P3-Power-Transistor Features single P-Channel in SO8 Qualified according JEDEC1) for target applications 150°C operating temperature V GS=25 V, specially suited for notebook applications Pb-free plating; RoHS compliant applications: battery management, load switching Halogen-free according to IEC61249-2-21 BSO080P03NS3 G Product Sum...



Infineon Technologies

BSO080P03NS3G

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