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IRF530NPbF

Part Number	IRF530NPbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 6, 2015
Detailed Description	l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit...
Datasheet	IRF530NPbF PDF File

Overview

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approx...

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IRF530NPbF HEXFET Power MOSFET - International Rectifier

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