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NCE1540KA

NCE Power Semiconductor
Part Number NCE1540KA
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published Jun 6, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE1540KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540K...
Datasheet PDF File NCE1540KA PDF File

NCE1540KA
NCE1540KA

Overview
http://www.
ncepower.
com Pb Free Product NCE1540KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =150V,ID =40A RDS(ON) < 45mΩ @ VGS=10V (Typ:35mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE1540K NCE1540K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 150 ±12 40 29 164 140 0.
93 310 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
1 http://www.
ncepower.
com Pb Free Product NCE1540KA Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.
07 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 150 170 - V Zero Gate Voltage Drain Current IDSS VDS=150V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS...


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