400V N-Channel MOSFET
Description
HFW11N40
Dec 2005
HFW11N40
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 11.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(O...
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