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HFW50N06

SemiHow
Part Number HFW50N06
Manufacturer SemiHow
Description 60V N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFW50N06_HFI50N06 Nov 2009 HFW50N06 / HFI50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A FEATURES ...
Datasheet PDF File HFW50N06 PDF File

HFW50N06
HFW50N06

Overview
HFW50N06_HFI50N06 Nov 2009 HFW50N06 / HFI50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
018 Ω (Typ.
) @VGS=10V ‰ 100% Avalanche Tested D2-PAK I2-PAK HFW50N06 HFI50N06 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 60 50 35.
4 200 ρ25 490 50 12 7.
0 PD TJ, TSTG TL Power Dissipation (TA = 25୅)* Power Dissi...


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