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HFS9N50
N-Channel MOSFET
Description
HFS9N50 Mar 2008 HFS9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 9.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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