N-Channel MOSFET
Description
HFP11N40
HFP11N40
400V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V
Dec 2005
BVDSS = 400 V RDS(on)...
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