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HFU3N80

Part Number	HFU3N80
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFD3N80/HFU3N80 Dec 2005 HFD3N80/HFU3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 2.5 A FEATURES...
Datasheet	HFU3N80 PDF File

Overview

HFD3N80/HFU3N80 Dec 2005 HFD3N80/HFU3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.
0 Ω ID = 2.
5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 4.
0 Ω (Typ.
) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD3N80 1 2 3 HFU3N80 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 2.
5 1.
57 10 ±30 320 2.
5 7.
0 4.
5 PD TJ, TSTG TL Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.
5 70 0.
56 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
1.
78 50 110 Units ℃/W ◎ SEMIHOW REV.
A0,Dec 2005 HFD3N80/HFU3N80 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.
25 A 2.
5 -- Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Revers...

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HFU3N80 N-Channel MOSFET - SemiHow

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