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C3011

Toshiba
Part Number C3011
Manufacturer Toshiba
Description 2SC3011
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit...
Datasheet PDF File C3011 PDF File

C3011
C3011

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.
) · Low noise figure: NF = 2.
3dB (typ.
), f = 1 GHz · High fT: fT = 6.
5 GHz Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Characteristics Transition frequ...


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