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C3076

Toshiba
Part Number C3076
Manufacturer Toshiba
Description 2SC3076
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File C3076 PDF File

C3076
C3076

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.
0 μs (typ.
) • Complementary to 2SA1241 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 10 Junction temperature Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ―...


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