Silicon NPN Power Transistor
Description
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3055H
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS ·Designed for general-purpose switching and amplifier
Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY...
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