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TGA3500-SM

TriQuint Semiconductor
Part Number TGA3500-SM
Manufacturer TriQuint Semiconductor
Description 2-12 GHz Driver Amplifier
Published Jun 13, 2015
Detailed Description Applications  General Purpose TGA3500-SM 2-12 GHz Driver Amplifier Product Features  Frequency Range: 2 – 12 GHz  P...
Datasheet PDF File TGA3500-SM PDF File

TGA3500-SM
TGA3500-SM

Overview
Applications  General Purpose TGA3500-SM 2-12 GHz Driver Amplifier Product Features  Frequency Range: 2 – 12 GHz  Power: 23 dBm PSAT  Gain: 34 dB  Output TOI: 29 dBm  Noise Figure: 3 dB  Bias: VD = 5 V, ID = 200 mA, VG1 = -0.
7 V, VG2 = -0.
6 V Typical  VSWR: 5 to 6  Package Dimensions: 8.
0 x 8.
0 x 2.
1 mm QFN 8x8mm 28L Functional Block Diagram 27 26 25 24 23 1 18 10 12 General Description TriQuint’s TGA3500-SM is a variable gain amplifier capable of supporting a variety of applications.
The TGA3500-SM operates from 2 to 12 GHz and is designed using proven TriQuint’s 0.
15um pHEMT production process.
The TGA3500-SM typically provides 23 dBm of linear power with 34 dB of small signal gain and 29 dBm of output TOI.
The Noise Figure is typically 3 dB.
The TGA3500-SM is available in a low-cost, surface mount 28 lead 8x8 AIN QFN package base with an Air cavity ceramic Lid.
The TGA3500-SM is ideally suited to support both commercial and defense related applications.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Pad Configuration Pad No.
1-4, 6-9, 11,13-17, 19-22, 28 5 10 12 18 23 24 25 26 27 Symbol No Connection RF IN VG1 VG2 RF OUT VD2T VD2 VCTRL2 VD1 VCTRL1 Ordering Information Part ECCN Description TGA3500-SM EAR99 2-12 GHz Gain Driver Amp Preliminary Datasheet: Rev- 07-22-13 © 2013 TriQuint - 1 of 11 - Disclaimer: Subject to change without notice www.
triquint.
com Absolute Maximum Ratings Parameter Drain Voltage (VD1, VD2) Drain to Gate Voltage (VD1-VG1, VD2-VG2) Value 6V 11 V Drain to Control Voltage (VD1-VCTRL1, VD2-VCTRL2) Gate Voltage Range (VG1, VG2) Control Voltage (VCTRL1, VCTRL2) Drain Current (ID1, ID2) Gate Current (IG1, IG2) Control Current (ICTRL1, ICTRL2) Power Dissipation (PDISS) RF Input Power, CW, 50 Ω, T = 25 °C (PIN) Channel Temperature (TCH) Mounting Temperature (30 Seconds) 7V -5 to 0 V (VD-7) to 5 V 192 mA, 192 mA -3.
6 to 101 mA -2.
7 to 76 mA 3.
8 W +25 dBm 200 °C 260 °C Storage Temperature...


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