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Si1307EDL

Vishay Siliconix
Part Number Si1307EDL
Manufacturer Vishay Siliconix
Description P-Channel 1.8 V (G-S) MOSFET
Published Jun 16, 2015
Detailed Description P-Channel 1.8 V (G-S) MOSFET Si1307EDL Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.290 at VGS = - 4....
Datasheet PDF File Si1307EDL PDF File

Si1307EDL
Si1307EDL

Overview
P-Channel 1.
8 V (G-S) MOSFET Si1307EDL Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.
290 at VGS = - 4.
5 V 0.
435 at VGS = - 2.
5 V 0.
580 at VGS = - 1.
8 V ID (A) ± 0.
91 ± 0.
74 ± 0.
64 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • ESD Protection: 3000 V • Compliant to RoHS Directive 2002/95/EC SOT-323 SC-70 (3-LEADS) G1 S2 3D Marking Code YY LF XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1307EDL-T1-E3 (Lead (Pb)-free) Si1307EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a TA = 25 °C TA = 70 °C Maximum Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg - 12 ±8 ± 0.
91 ± 0.
85 ± 0.
72 ± 0.
68 ±3 - 0.
28 - 0.
24 0.
34 0.
29 0.
22 0.
19 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
Surface mounted on 1" x 1" FR4 board.
t≤5s Steady State Steady State Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 Unit °C/W Document Number: 71096 S10-0721-Rev.
B, 29-Mar-10 www.
vishay.
com 1 Si1307EDL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.
5 V VDS = - 9.
6 V, VGS = 0 V VDS = - 9.
6 V, VGS = 0 V, TJ = 70 °C VDS - 5 V, VGS = - 4.
5 V VGS = - 4.
5 V, ID = - 1 A VGS = - 2.
5 V, ID = - 0.
5 A VGS = - 1.
8 V, ID = - 0.
3 A VDS = - 5 V, ID = - 1 A IS = - 1 A, V...


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