P-Channel PowerTrench MOSFET
Description
FDC642P_F085 P-Channel PowerTrench® MOSFET
FDC642P_F085
P-Channel PowerTrench® MOSFET
-20V, -4A, 100mΩ
Features
Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A Fast switching speed
Low gate charge(6.9nC typical)
High performance trench technology for extremely low rDS(on)
SuperSOTTM-6 package:small ...
Similar Datasheet
