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IS45S81600E

Integrated Silicon Solution
Part Number IS45S81600E
Manufacturer Integrated Silicon Solution
Description 128Mb SYNCHRONOUS DRAM
Published Jun 18, 2015
Detailed Description IS45S81600E IS45S16800E 1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER 2011 FEATURES • Clock frequency: 166, 143 MHz •...
Datasheet PDF File IS45S81600E PDF File

IS45S81600E
IS45S81600E

Overview
IS45S81600E IS45S16800E 1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER 2011 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS45S81600E Vdd Vddq 3.
3V 3.
3V IS45S16800E 3.
3V 3.
3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read...


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