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FW306

Part Number	FW306
Manufacturer	Sanyo Semicon Device
Description	N- Channel Silicon MOS FET High Speed Switching
Published	Mar 23, 2005
Detailed Description	FW306 N- Channel Silicon MOS FET High Speed Switching TENTATIVE Features • High density mounting is possible because of ...
Datasheet	FW306 PDF File

Overview

FW306 N- Channel Silicon MOS FET High Speed Switching TENTATIVE Features • High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.
• Low ON-state resistance.
Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C (N-channel) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resista...

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