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KHB4D0N65P

Part Number	KHB4D0N65P
Manufacturer	KEC
Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published	Jul 5, 2015
Detailed Description	SEMICONDUCTOR TECHNICAL DATA KHB4D0N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe...
Datasheet	KHB4D0N65P PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA KHB4D0N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switch mode power supplies.
FEATURES VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.
0 @VGS = 10V Qg(typ.
)=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power ...

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