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SDM4435

SamHop
Part Number SDM4435
Manufacturer SamHop
Description P-Channel Enhancement Mode MOS FET
Published Jul 6, 2015
Detailed Description S DM4435 P -C hannel E nhancement Mode MOS FE T J ul.27 2004 ver1.1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W )...
Datasheet PDF File SDM4435 PDF File

SDM4435
SDM4435

Overview
S DM4435 P -C hannel E nhancement Mode MOS FE T J ul.
27 2004 ver1.
1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -30V -8A 20 @ VGS = -10V 35 @ VGS = -4.
5V F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
DDDD 8 7 65 5 S O-8 1 1 234 S SS G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 25 -8 -40 -1.
7 2.
5 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S DM4435 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) P a ra meter S ymbol C ondition Min Typ C Max Unit OFF CHARACTERISTICS 5 Drain-S ource Breakdown Voltage BVDSS VGS =0V,...


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