DatasheetsPDF.com

TC74AC86FT

Toshiba Semiconductor
Part Number TC74AC86FT
Manufacturer Toshiba Semiconductor
Description Quad Exclusive OR Gate
Published Jul 7, 2015
Detailed Description TC74AC86P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC86P, TC74AC86F, TC74AC86FT Quad Exclusiv...
Datasheet PDF File TC74AC86FT PDF File

TC74AC86FT
TC74AC86FT

Overview
TC74AC86P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC86P, TC74AC86F, TC74AC86FT Quad Exclusive OR Gate The TC74AC86 is an advanced high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is includes on output buffer, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 4.
4 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 5.
5 V • Pin and function compatible with 74F86 TC74AC86P TC74AC86F TC74AC86FT Weight DIP14-P-300-2.
54 SOP14-P-300-1.
27A TSSOP14-P-0044-0.
65A : 0.
96 g (typ.
) : 0.
18 g (typ.
) : 0.
06 g (typ.
) Start of commercial production 1987-05 1 2014-03-01 Pin Assignment TC74AC86P/F/FT IEC Logic Symbol 1A 1 1B 2 1Y 3 2A 4 2B 5 2Y 6 GND 7 (top view) Truth Table A B Y L L L L H H H L H H H L 14 VCC 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y 1A (1) =1 1B (2) 2A (4) 2B (5) 3A (9) 3B (10) 4A (12) 4B (13) (3) 1Y (6) 2Y (8) 3Y (11) 4Y Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7.
0 V −0.
5 to VCC + 0.
5 V −0.
5 to VCC + 0.
5 V ±20 mA ±50 mA ±50 mA ±100 mA 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW −65 to 150 °C Note 1: Exceeding any of the absolute ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)