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VS-1EFH02HM3

Vishay
Part Number VS-1EFH02HM3
Manufacturer Vishay
Description Hyperfast Rectifier
Published Jul 11, 2015
Detailed Description www.vishay.com VS-1EFH02HM3 Vishay Semiconductors Hyperfast Rectifier, 1 A FRED Pt® DO-219AB (SMF) Cathode Anode F...
Datasheet PDF File VS-1EFH02HM3 PDF File

VS-1EFH02HM3
VS-1EFH02HM3


Overview
www.
vishay.
com VS-1EFH02HM3 Vishay Semiconductors Hyperfast Rectifier, 1 A FRED Pt® DO-219AB (SMF) Cathode Anode FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF (typ.
125 °C) trr TJ max.
Diode variation DO-219AB (SMF) 1A 200 V 0.
74 V 25 ns 175 °C Single die DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics.
These devices are intended for use in snubber boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element.
 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) Non-repetitive peak surge current IFSM Operating junction and storage temperature range TJ, TStg Note (1) Device on PCB with 8 mm x 16 mm soldering lands TEST CONDITIONS TC = 160 °C (1) TJ = 25 °C VALUES 200 1 35 -65 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN.
Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 200 Forward voltage IF = 1 A VF IF = 1 A, TJ = 125 °C - Reverse leakage current VR = VR rated IR TJ = 125 °C, VR = VR rated - Junction capacitance CT VR = 200 V - TYP.
- 0.
87...



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