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SQD15N06-42L

Vishay
Part Number SQD15N06-42L
Manufacturer Vishay
Description Automotive N-Channel 60V (D-S) MOSFET
Published Jul 11, 2015
Detailed Description www.vishay.com SQD15N06-42L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY d VDS (V) ...
Datasheet PDF File SQD15N06-42L PDF File

SQD15N06-42L
SQD15N06-42L

Overview
www.
vishay.
com SQD15N06-42L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY d VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.
5 V ID (A) Configuration Package TO-252 60 0.
042 0.
060 15 Single TO-252 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified • Package with low thermal resistance • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 D Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 60 ± 20 15 10 15 50 18 16.
2 37 11 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mount c Junction-to-Case (Drain) Notes a.
Package limited.
b.
Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c.
When mounted on 1" square PCB (FR4 material).
SYMBOL RthJA RthJC LIMIT 50 4 UNIT V A mJ W °C UNIT °C/W S15-1873-Rev.
G, 10-Aug-15 1 Document Number: 68880 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQD15N06-42L Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS ID...


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