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EDJ4216EFBG-L

Part Number	EDJ4216EFBG-L
Manufacturer	Micron
Description	32 Meg x 16 x 8 banks DDR3L-RS SDRAM
Published	Jul 14, 2015
Detailed Description	4Gb: x8, x16 DDR3L-RS SDRAM Description DDR3L-RS SDRAM EDJ4208EFBG-L – 64 Meg x 8 x 8 banks EDJ4216EFBG-L – 32 Meg x 16...
Datasheet	EDJ4216EFBG-L PDF File

Overview

4Gb: x8, x16 DDR3L-RS SDRAM Description DDR3L-RS SDRAM EDJ4208EFBG-L – 64 Meg x 8 x 8 banks EDJ4216EFBG-L – 32 Meg x 16 x 8 banks Description The 1.
35V DDR3L-RS SDRAM device is a low-voltage version of the DDR3 (1.
5V) SDRAM.
Refer to the DDR3 (1.
5V) SDRAM data sheet specifications when running in 1.
5V-compatible mode.
Features • VDD = VDDQ = 1.
35V (1.
283–1.
45V) • Backward compatible to VDD = VDDQ = 1.
5V ±0.
075V – Supports DDR3L devices to be backward compatible in 1.
5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • Programmable partia...

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EDJ4216EFBG-L 32 Meg x 16 x 8 banks DDR3L-RS SDRAM - Micron

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