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LBAS16WT1G

Leshan Radio Company
Part Number LBAS16WT1G
Manufacturer Leshan Radio Company
Description Switching Diode
Published Jul 18, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with R...
Datasheet PDF File LBAS16WT1G PDF File

LBAS16WT1G
LBAS16WT1G

Overview
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25oC) Rating Symbol Max Continuous Reverse Voltage VR 75 Recurrent Peak Forward Current IR 200 Peak Forward Surge Current Pulse Width = 10 µs IFM(surge) 500 Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) PD 200 1.
6 Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) RθJA 0.
625 DEVICE MARKING LBAS16WT1G= A6 Unit V mA mA mW mW/°C °C Unit °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic F...


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