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BLM4435

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P-Channel Enhancement Mode Power MOSFET


Description
Pb Free Product BLM4435 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schematic diagram ● High Power and curren...



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BLM4435

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