P-Channel Enhancement Mode Field Effect Transistor
Description
RCR1526SQ
P-Channel Enhancement Mode Field Effect Transistor
z Features VDS(V) = -30V, ID = -5.2A, RDS(ON) = 51mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High density cell design for low RDS(ON).
very small outline surface mount package.
z Pin Configuration
DDD
D
z General Description This P-Channel enhancement mode power FETs are produced with high ...
