Silicon Epitaxial Schottky Barrier Type Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR07S30U
DSR07S30U
High Speed Switching Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range
VR IO IFSM Tj Tstg
30 700 ＊
5 125 −55 to 125
V mA A °...
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