Monolithic Bipolar MOS Transistor
Description
Advance Technical Information
High Voltage, High Gain BiMOSFETTM
Monolithic Bipolar MOS Transistor
IXBL64N250
VCES IC110
VCE(sat)
= =
≤
2500V 46A 3.0V
(Electrically Isolated Tab)
ISOPLUS i5-PakTM
Symbol
VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA)
T(SSCC SOA)
PC TJ TJM Tstg TL TSOLD VISOL FC Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 15...
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