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NTMFS4C03N

ON Semiconductor
Part Number NTMFS4C03N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jul 31, 2015
Detailed Description NTMFS4C03N Power MOSFET 30 V, 2.1 mW, 136 A, Single N−Channel, SO−8FL Features • Small Footprint (5x6 mm) for Compact D...
Datasheet PDF File NTMFS4C03N PDF File

NTMFS4C03N
NTMFS4C03N

Overview
NTMFS4C03N Power MOSFET 30 V, 2.
1 mW, 136 A, Single N−Channel, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Steady State TC = 25°C TC = 25°C Continuous Drain Cur- rent 3) RqJA (Notes 1, 2, Power Dissipation RqJA (Notes 1, 2, 3) Steady State TA = 25°C TA = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID 30 "20 136 64 30 PD 3.
1 IDM TJ, Tstg 900 −55 to 150 V V A W A W A °C Source Current (Body Diode) IS 53 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A) EAS 549 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 1.
95 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Surface−mounted on FR4 board using a 650 mm2, 2 oz.
Cu pad.
3.
Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.
com V(BR)DSS 30 V RDS(ON) MAX 2.
1 mW @ 10 V 2.
8 mW @ 4.
5 V ID MAX 136 A D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM D SD S 4C03N S AYWZZ GD D ...


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