DatasheetsPDF.com

RJK03M5DNS

Renesas Technology
Part Number RJK03M5DNS
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Aug 3, 2015
Detailed Description RJK03M5DNS Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive...
Datasheet PDF File RJK03M5DNS PDF File

RJK03M5DNS
RJK03M5DNS

Overview
RJK03M5DNS Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 5.
2 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 Preliminary Datasheet R07DS0769EJ0110 Rev.
1.
10 May 29, 2012 5 678 D DDD 4 321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 25 100 25 10.
5 11 15 8.
3 150 –55 to +150 (Ta = 25°C) Unit V V A A A ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)