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L2SB1197KRLT1G

Leshan Radio Company
Part Number L2SB1197KRLT1G
Manufacturer Leshan Radio Company
Description Low Frequency Transistor PNP Silicon
Published Aug 7, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compa...
Datasheet PDF File L2SB1197KRLT1G PDF File

L2SB1197KRLT1G
L2SB1197KRLT1G

Overview
LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package.
IC = í0.
8A.
www.
DataSheet4U.
com ƽEpitaxial planar type.
ƽNPN complement: L2SD1781K ƽPb-Free Package is available.
3 1 2 SOT– 23 (TO–236AB) DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G AHQ AHQ (Pb-Free) AHR AHR (Pb-Free) 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel MAXIMUM RATINGS(Ta=25qC) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −40 −32 −5 −0.
8 0.
2 150 −55 to 150 Unit V V V A W °C °C ELECTRICAL CHARACTERISTICS(Ta=25qC) Parameter Symbol Min.
Collector-base breakdown voltage BVCBO −40 Collector-emitter breakdown voltage BVCEO −32 Emitter-base breakdown voltage BVEBO −5 Collector cu...


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