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L2SA812QLT1G

Leshan Radio Company
Part Number L2SA812QLT1G
Manufacturer Leshan Radio Company
Description General Purpose Transistors
Published Aug 7, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽN...
Datasheet PDF File L2SA812QLT1G PDF File

L2SA812QLT1G
L2SA812QLT1G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: L2SC1623 ƽPb-Free Package is available.
www.
DataSheet4U.
DcoEmVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SA812QLT1 M8 3000/Tape&Reel L2SA812QLT1G L2SA812RLT1 M8 (Pb-Free) M6 3000/Tape&Reel 3000/Tape&Reel L2SA812RLT1G L2SA812SLT1 M6 (Pb-Free) M7 3000/Tape&Reel 3000/Tape&Reel L2SA812SLT1G M7 (Pb-Free) MAXIMUM RATINGS 3000/Tape&Reel Rating Symbol L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V Collector current-continuoun IC THERMAL CHARATEERISTICS -150 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Symbol PD R θJA Max 200 1.
8 556 Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and ...


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