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MIP2E1DMU

Silicon MOS-type integrated circuit

Description

MIP2E1DMU MOS (IPD) ■ ■ ■ Ta = 25°C ± 3°C VD 700 VC 10 ID 0.43 IDP 0.61 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ U-G4 1: Control 2: Source 3: Drain ■ : MIP2E1D ■ Control 1 Max Duty Clock Sawtooth SQ RQ SQ V-I R Q : 2010 3 SLB00036BJD 3 Drain MOSFET 2 Source 1 MIP2E1DMU ■ TC = 25°C ± 2°C PWM / ) *: * * fOSC MAXDC GPWM m VC =...

Panasonic

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