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L2SD2114KWLT1G

Leshan Radio Company
Part Number L2SD2114KWLT1G
Manufacturer Leshan Radio Company
Description Epitaxial planar type NPN silicon transistor
Published Aug 11, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 ...
Datasheet PDF File L2SD2114KWLT1G PDF File

L2SD2114KWLT1G
L2SD2114KWLT1G

Overview
LESHAN RADIO COMPANY, LTD.
Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain.
hFE = 1200 (Typ.
) 2) High emitter-base voltage.
VEBO =12V (Min.
) www.
DataSheet4U.
com3) Low VCE (sat).
VCE (sat) = 0.
18V (Typ.
) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available.
L2SD2114K*LT1 3 1 2 SOT– 23 (TO–236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms PC Tj Tstg Limits 25 20 12 0.
5 1 0.
2 150 −55∼+150 Unit V V V A(DC) A(Pulse) ∗ W °C °C COLLECTOR 3 1 B...


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