Epitaxial planar type
LESHAN RADIO COMPANY, LTD.
NPN silicon transistor
L2SD2114KVLT1G Series
zFeatures 1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO =12V (Min.)
3
3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
1 2
4) We declare that the material of product compliance wit...
