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LDTC115EWT3G

Leshan Radio Company
Part Number LDTC115EWT3G
Manufacturer Leshan Radio Company
Description Bias Resistor Transistor
Published Aug 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTC115EWT3G PDF File

LDTC115EWT3G
LDTC115EWT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Collector Power dissipation Junction temperature Storage temperature Symbol VCC VI IO I C(Max.
) Pc Tj Tstg Limits 50 −10 to +40 20 100 200 150 −55 to +150 Unit V V mA mA mW °C °C LDTC115EWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC115EWT1G N6 100 100 3000/Tape & Reel LDTC115EWT3G N6 100 100 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Input voltage VI(off) VI(on) Output voltage VO(on) Input current II Output current IO(off) DC current gain GI Input resistance R1 Resistance ratio R2/R1 Transition frequency fT ∗ ∗ Characteristics of built-in transistor Min.
− 3 − − − 82 70 0.
8 − Typ.
Max.
− 0.
5 −− 0.
1 0.
3 − 0.
15 − 0.
5 −− 100 130 1 1.
2 250 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.
3V, IO=1mA IO=5mA, II=0.
25mA VI=5V VCC=50V, VI=0V IO=5mA, VO=5V − − VCE=10V, IE=−5mA, f=100MHz 1/2 LESHAN RADIO COMPANY, LTD.
LDTC115EWT1G SC−70 (SOT−323) D e1 3 HE 1 E 2 b e 0.
05 (0.
002) A1 A A2 SOLDERING FOOTPRINT* 0.
65 0.
025 0.
65 0.
025 L 0.
9 0.
035 0.
7 0.
028 1.
9 0.
075 ǒ ǓSCALE 10:1 mm inches NOTES: 1.
DIMENSIONING AND TO...


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