Silicon N Channel Power MOS FET
Description
RJK0652DPB
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0077EJ0200 Rev.2.00
Apr 09, 2013
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 5.5 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package co...
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